<p>This research introduces a self-powered photodetector based on a p-GeTe/n-MoS₂ heterojunction. The devices were fabricated on Si/SiO₂ and flexible polyimide substrates, which exhibited sensitive response to visible light (405 nm) and near-infrared light (808 nm). The heterojunction composed of GeTe and MoS₂ facilitates efficient light absorption across a broad range of wavelengths and charge separation through the built-in electric field. The p-GeTe/n-MoS₂ heterojunction exhibits self-powered response without bias, achieving a peak responsivity of 3877 A/W and a detectivity of 8.1 × 10¹² Jones at 405 nm, along with rapid response. Under 808 nm illumination, the device shows a responsivity of 1.28 A/W and detectivity of 1.2 × 10⁹ Jones. Moreover, GeTe/MoS₂ photodetector on flexible substrate was demonstrated, which exhibited stable photoresponse during bending measurements (500 cycles), overcoming the issue that traditional rigid detectors cannot be bent or deformed. This work offers a pathway for developing flexible and broadband photodetectors, which is promising in the field of wearable sensing.</p>