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<p>The cathode interfacial layer (CIL) in organic solar cells (OSCs) is crucial for the transport and collection of charge carriers. However, many cathode interfacial materials (CIMs) are unsuitable for printing manufacturing due to their sensitivity to thickness. To tackle this issue, researchers have developed a series of CIMs with n-type conjugated frameworks, particularly the naphthalene diimide (NDI) unit, owing to its high electron mobility and complementary absorption with commonly used active layers. Despite this, individual NDI molecules have a strong tendency to form large crystalline domains, which can lead to interfacial defects in CILs. In this work, a different approach from other NDI-based CIMs was adopted by substituting amino polar groups at the core position of NDI and polymerizing them into ionene-type CIMs. We designed and synthesized three self-doped polymer CIMs named PN-Pi, PN-Pe and PN-Eh. Among them, PN-Pi notably reduces the work function of the Ag electrode, aligns interfacial energies appropriately, smooths the active layer film and suppresses carrier injection. This results in an impressive power conversion efficiency (PCE) of 18.33% in the PM6:L8-BO system and maintains 90.4% PCE even at 127 nm thickness, ranking among the top film-thickness tolerance in the OSC field. This work demonstrates that combining conjugated backbone substitution with ionic polymerization is a promising strategy for designing high-performance CIMs for OSCs.</p>

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Thickness insensitive cathode interfacial materials via conjugated backbone ion polymerization for efficient organic solar cells

  • 期刊论文

  • 发表日期：

    2025年3月17日

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  • Yi-Guo Qin,
  • Wen-Cai Wang,
  • Wen-Jing Sun,
  • Ya-Ting Wang,
  • Shijie Cheng,
  • Shun-Da Wu,
  • Sheng-Min Gan,
  • Zhan Huang,
  • Jia Sun,
  • Qiu-Tong Shi,
  • Yong Huo,
  • Lingxian Meng,
  • Yamin Zhang,
  • Hao-Li Zhang

摘要

The cathode interfacial layer (CIL) in organic solar cells (OSCs) is crucial for the transport and collection of charge carriers. However, many cathode interfacial materials (CIMs) are unsuitable for printing manufacturing due to their sensitivity to thickness. To tackle this issue, researchers have developed a series of CIMs with n-type conjugated frameworks, particularly the naphthalene diimide (NDI) unit, owing to its high electron mobility and complementary absorption with commonly used active layers. Despite this, individual NDI molecules have a strong tendency to form large crystalline domains, which can lead to interfacial defects in CILs. In this work, a different approach from other NDI-based CIMs was adopted by substituting amino polar groups at the core position of NDI and polymerizing them into ionene-type CIMs. We designed and synthesized three self-doped polymer CIMs named PN-Pi, PN-Pe and PN-Eh. Among them, PN-Pi notably reduces the work function of the Ag electrode, aligns interfacial energies appropriately, smooths the active layer film and suppresses carrier injection. This results in an impressive power conversion efficiency (PCE) of 18.33% in the PM6:L8-BO system and maintains 90.4% PCE even at 127 nm thickness, ranking among the top film-thickness tolerance in the OSC field. This work demonstrates that combining conjugated backbone substitution with ionic polymerization is a promising strategy for designing high-performance CIMs for OSCs.