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<p>Gallium oxide (Ga<sub>2</sub>O<sub>3</sub>), with an ultrawide bandgap corresponding to the deep ultraviolet (DUV) spectra range, provides a potential subversive scheme for the filter-free DUV photodetection. Meanwhile, the various crystal phases of Ga<sub>2</sub>O<sub>3</sub> provide more substrate options for achieving heteroepitaxy, with the coupling of Ga<sub>2</sub>O<sub>3</sub> to SiC substrates conducive to developing integrated Ga<sub>2</sub>O<sub>3</sub> DUV photodetectors. Phase engineering of <i>β</i>-Ga<sub>2</sub>O<sub>3</sub> and <i>ε</i>-Ga<sub>2</sub>O<sub>3</sub> was achieved on the commercial 4H-SiC substrate via metal-organic chemical vapor deposition. According to the in-depth analysis of different Ga<sub>2</sub>O<sub>3</sub> growth stages, it was found that <i>β</i>-Ga<sub>2</sub>O<sub>3</sub> is easy to form under high-pressure growth conditions, while low-pressure conditions promote the formation of <i>ε</i>-Ga<sub>2</sub>O<sub>3</sub> at 500°C. Furthermore, the developed <i>ε</i>-phase dominated Ga<sub>2</sub>O<sub>3</sub> DUV photodetector exhibits obvious advantages in high responsivity (∼639 A/W), photo-to-dark current ratio (∼2.4×10<sup>7</sup>), external quantum efficiency (∼3.15×10<sup>5</sup>%), and specific detectivity (∼9.62×10<sup>13</sup> Jones) under 254 nm illumination. This work not only reveals the growth mechanism of Ga<sub>2</sub>O<sub>3</sub> films under various pressures but also ensures the great potential of <i>ε</i>-Ga<sub>2</sub>O<sub>3</sub> for highly sensitive DUV detection on the heterogeneous substrate, which is expected to expand the application of Ga<sub>2</sub>O<sub>3</sub> optoelectronic devices.</p>

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Crystal-phase engineering of ε-Ga2O3 for high-performance deep UV photodetectors via MOCVD

  • 期刊论文

  • 发表日期：

    2025年3月4日

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  • Zhiwei Wang,
  • Hong Huang,
  • Xiaohu Hou,
  • Keju Han,
  • Weiheng Zhong,
  • Xiao Feng,
  • Haoyan Zhan,
  • Weizhen Liu,
  • Xiaolong Zhao,
  • Nan Gao,
  • Shibing Long

摘要

Gallium oxide (Ga2O3), with an ultrawide bandgap corresponding to the deep ultraviolet (DUV) spectra range, provides a potential subversive scheme for the filter-free DUV photodetection. Meanwhile, the various crystal phases of Ga2O3 provide more substrate options for achieving heteroepitaxy, with the coupling of Ga2O3 to SiC substrates conducive to developing integrated Ga2O3 DUV photodetectors. Phase engineering of β-Ga2O3 and ε-Ga2O3 was achieved on the commercial 4H-SiC substrate via metal-organic chemical vapor deposition. According to the in-depth analysis of different Ga2O3 growth stages, it was found that β-Ga2O3 is easy to form under high-pressure growth conditions, while low-pressure conditions promote the formation of ε-Ga2O3 at 500°C. Furthermore, the developed ε-phase dominated Ga2O3 DUV photodetector exhibits obvious advantages in high responsivity (∼639 A/W), photo-to-dark current ratio (∼2.4×107), external quantum efficiency (∼3.15×105%), and specific detectivity (∼9.62×1013 Jones) under 254 nm illumination. This work not only reveals the growth mechanism of Ga2O3 films under various pressures but also ensures the great potential of ε-Ga2O3 for highly sensitive DUV detection on the heterogeneous substrate, which is expected to expand the application of Ga2O3 optoelectronic devices.