<p>In recent years, Fe<sup>3+</sup>-doped near-infrared (NIR) phosphors have garnered significant attention, primarily due to their non-toxic nature, long emission wavelength, and excellent thermal stability. In this work, a series of NaBaScSi<sub>2</sub>O<sub>7</sub>: <i>x</i>Fe<sup>3+</sup> (<i>x</i> = 0.01–0.07) phosphors were synthesized by the conventional solid-state reaction method. The impact of Fe<sup>3+</sup> doping on the bandgap of NaBaScSi<sub>2</sub>O<sub>7</sub> was analyzed by diffuse reflectance spectroscopy (DRS) and first-principles calculations. Under excitation at 301 nm, the series of phosphors emitted broadband NIR luminescence at 815 nm with full width at half maximum (FWHM) of 116 nm. Varying-temperature testing of the NaBaScSi<sub>2</sub>O<sub>7</sub>: 0.03Fe<sup>3+</sup> phosphor indicated that it can retain 46% of its room temperature luminescence intensity at 423 K. This excellent thermal stability is attributed to the small Huang-Rhys factor (<i>S</i>), which results in weak electron-phonon coupling. In addition, the NIR phosphor-converted light-emitting diode (NIR pc-LED) integrated from the NaBaScSi<sub>2</sub>O<sub>7</sub>: 0.03Fe<sup>3+</sup> optimal phosphor and a 310 nm ultraviolet (UV) chip showed a superior night vision capability.</p>

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A novel broadband near-infrared phosphor NaBaScSi2O7: Fe3+ and its application in pc-LED and night vision

  • Changshuai Gong,
  • Ziying Wang,
  • Jiantong Wang,
  • Xuyan Xue,
  • Xuejiao Wang

摘要

In recent years, Fe3+-doped near-infrared (NIR) phosphors have garnered significant attention, primarily due to their non-toxic nature, long emission wavelength, and excellent thermal stability. In this work, a series of NaBaScSi2O7: xFe3+ (x = 0.01–0.07) phosphors were synthesized by the conventional solid-state reaction method. The impact of Fe3+ doping on the bandgap of NaBaScSi2O7 was analyzed by diffuse reflectance spectroscopy (DRS) and first-principles calculations. Under excitation at 301 nm, the series of phosphors emitted broadband NIR luminescence at 815 nm with full width at half maximum (FWHM) of 116 nm. Varying-temperature testing of the NaBaScSi2O7: 0.03Fe3+ phosphor indicated that it can retain 46% of its room temperature luminescence intensity at 423 K. This excellent thermal stability is attributed to the small Huang-Rhys factor (S), which results in weak electron-phonon coupling. In addition, the NIR phosphor-converted light-emitting diode (NIR pc-LED) integrated from the NaBaScSi2O7: 0.03Fe3+ optimal phosphor and a 310 nm ultraviolet (UV) chip showed a superior night vision capability.