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<p>In this study, a typical hillock surface defect was discovered in (010) <i>β</i>-Ga<sub>2</sub>O<sub>3</sub> thin films grown by metal-organic chemical vapor deposition (MOCVD), and the morphology and structure were systematically investigated. The observed defects exhibit a polygonal shape with a ridge-like hillock along the [001] direction. Transmission electron microscopy (TEM) microanalysis reveals that polygonal hillock defects are composed of twin grains forming an inverted pyramid shape embedded in the epitaxial layer, which exhibits twofold rotational symmetry along the [100] crystal direction. The boundary between the defective and perfect lattices appears band-like, characterized by complex faults, with structural relationships between the twin region and the matrix identified as [001]<sub>matrix</sub>∥[010]<sub>Defect</sub> and {−310}<sub>matrix</sub>∥{−201}<sub>Defect</sub>. The origin of surface defects in the (010) <i>β</i>-Ga<sub>2</sub>O<sub>3</sub> homoepitaxial layers could be attributed not only to the extent of substrate defects but also to epitaxial process conditions. The definitive explanation is the localized aggregation of gallium atoms/oxygen vacancies during the growth process, as evidenced by energy-dispersive X-ray (EDX) analysis and optimized experiments. This work provides brand-new perspectives into the study of defects in <i>β</i>-Ga<sub>2</sub>O<sub>3</sub> epitaxial films, which further advances the application of Ga<sub>2</sub>O<sub>3</sub> materials in power device technologies.</p>

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The in-situ parasitic microstructure interface and defect formation mechanism in (010) β-Ga2O3 epitaxial film via MOCVD

  • 期刊论文

  • 发表日期：

    2025年1月2日

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  • Xianqiang Song,
  • Yunlong He,
  • Zhan Wang,
  • Xiaoli Lu,
  • Jing Sun,
  • Ying Zhou,
  • Yang Liu,
  • Jiatong Fan,
  • Xiaoning He,
  • Xuefeng Zheng,
  • Xiaohua Ma,
  • Yue Hao

摘要

In this study, a typical hillock surface defect was discovered in (010) β-Ga2O3 thin films grown by metal-organic chemical vapor deposition (MOCVD), and the morphology and structure were systematically investigated. The observed defects exhibit a polygonal shape with a ridge-like hillock along the [001] direction. Transmission electron microscopy (TEM) microanalysis reveals that polygonal hillock defects are composed of twin grains forming an inverted pyramid shape embedded in the epitaxial layer, which exhibits twofold rotational symmetry along the [100] crystal direction. The boundary between the defective and perfect lattices appears band-like, characterized by complex faults, with structural relationships between the twin region and the matrix identified as [001]matrix∥[010]Defect and {−310}matrix∥{−201}Defect. The origin of surface defects in the (010) β-Ga2O3 homoepitaxial layers could be attributed not only to the extent of substrate defects but also to epitaxial process conditions. The definitive explanation is the localized aggregation of gallium atoms/oxygen vacancies during the growth process, as evidenced by energy-dispersive X-ray (EDX) analysis and optimized experiments. This work provides brand-new perspectives into the study of defects in β-Ga2O3 epitaxial films, which further advances the application of Ga2O3 materials in power device technologies.