High-quality crystalline NiO/β-Ga2O3 p–n heterojunctions grown by the low-cost and vacuum-free mist-CVD for device applications
摘要
Gallium oxide (Ga2O3) p–n heterojunctions play an important role in addressing the difficulties in Ga2O3 p-type doping. Therefore, an efficient and economical fabrication method needs to be established to create single-crystal Ga2O3 heterojunctions for device applications. In this work, we successfully achieved epitaxial growth of single-crystal nickel oxide (NiO) and β-Ga2O3 heterojunctions based on the low-cost and vacuum-free mist chemical-vapor deposition. The full width at half maximum of the X-ray diffraction rocking curves of NiO (111) and β-Ga2O3 (−201) reached 0.077° and 0.807°, respectively. The energy band between NiO and β-Ga2O3 has a Type II heterojunction. Finally, we prepared a quasi-vertical diode based on the NiO/β-Ga2O3 heterojunction, which exhibits obvious rectification characteristics of the p–n junction and provides a reverse breakdown voltage of 117 V. This work proposes a low-cost fabrication method for β-Ga2O3 p–n heterojunctions.