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Room-temperature ferroelectricity in magnetically ordered CoH2SeO4 flakes

  • Luqiu Chen,
  • Bing Yu,
  • Yang Shen,
  • Yifei Liu,
  • Haonan Wang,
  • Guangdi Feng,
  • Qiuxiang Zhu,
  • Weidong Luo,
  • Junming Liu,
  • Jianguo Wan,
  • Qingbiao Zhao,
  • Bobo Tian,
  • Junhao Chu,
  • Chungang Duan

摘要

Here, we demonstrate the existence of magnetic ordering and sliding ferroelectricity in two-dimensional CoH2SeO4 multilayers. The experimental result reveals the antiferromagnetic order in powder sample, and first-principles calculation indicates the antiferromagnetic ground state with TN≈75 K in CoH2SeO4 single layer. The sliding ferroelectricity with an asymmetric triplet potential well is theoretically predicted and experimentally confirmed by 180°-piezoelectric hysteresis loops, switchable domains and second harmonic generation signals in CoH2SeO4 multilayers. The vertically stacked ferroelectric capacitor shows both polarization and capacitance hysteresis loops. A ferroelectric transition temperature of ~370 K is obtained from the temperature-dependent dielectricity. The emergence of sliding ferroelectricity and anti-ferromagnetism points out a new route for obtaining low-dimensional multiferroic materials.