Strongly stable resistive random access memory based on quasi-two-dimensional perovskites

Resistive random access memory (RRAM) has been regarded as a challenging alternative for emerging memory technologies. In recent years, organic-inorganic hybrid halide prerovskite-based RRAMs have been found to have superior storage properties. In this work, an Al/(PEA)₂-MAPb₂I₃Br₄/SnO₂/indium tin oxide nonvolatile RRAM demonstrated outstanding and highly stable bipolar resistance switching characteristics, which was prepared with a quasi-two-dimensional perovskite active layer using a simple one-step spin-casting strategy in air without antisolvent. In addition, the device showed an on/off ratio of approximately 10⁴, a low set voltage (∼0.8 V), and a relatively stable endurance (>1000 cycles). The conduction mechanisms of the high- and low-resistance states were space-charge-limited-current conduction and Ohmic conduction, respectively. Moreover, owing to the hydrophobicity of the phenethylamine molecule, the device exhibited notable resistive characteristics at 40% humidity for more than 90 days. Thus, this high-performance and stable RRAM offers unlimited prospects for future memory commercialization.