Boosting the mobility of organic semiconductors through strain engineering
摘要
Organic semiconductors (OSCs) are pivotal for advancing flexible electronics. However, their application has been severely hindered by their poor mobility. Although molecular and device engineering can improve OSC mobility, progress has stagnated in recent years. In this study, we uncovered the layer-dependent charge transport properties of OSCs under strain and substantially enhanced their mobility by strain engineering. Applying strain reduced intermolecular π-π spacing and electron-phonon scattering, thereby improving the charge transport efficiency. We observed a direct correlation between strain factor and material thickness, with thinner crystals demonstrating higher strain factors. Using molecularly thin two-dimensional molecular crystals, we achieved a substantial 58% increase in mobility. Our findings open new avenues to enhancing the mobility of OSCs.