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<p>In solar manufacturing, 30–50% of high-purity silicon is lost as kerf during wafer production. This study investigated HCl leaching to remove Al and Fe from diamond wire sawing kerf waste. The initial material contained 5145&#xa0;ppm Al and 158&#xa0;ppm Fe. The impact of solid-to-liquid (S:L) ratio, HCl concentration, and the leaching time was investigated. Increasing the acid concentration and leaching time led to greater impurity removal. The optimum S:L ratio for both Al and Fe removal was 4:25. For Al, the highest removal percentage of 83.6% was achieved with 18 wt% HCl and 180&#xa0;min of leaching. For Fe, the maximum removal of 93.3% was obtained with 14 wt% HCl and 60&#xa0;min of leaching. Kinetic analysis revealed that Al dissolution followed SCM-chemical reaction control in the first 30&#xa0;min, transitioning to SCM product layer diffusion control thereafter.</p> Graphical Abstract <p></p>

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Removal of Metallic Impurities from Silicon Kerf Waste

  • 期刊论文

  • 发表日期：

    2025年11月28日

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  • Bhavya Bhatt,
  • Leili Tafaghodi

摘要

In solar manufacturing, 30–50% of high-purity silicon is lost as kerf during wafer production. This study investigated HCl leaching to remove Al and Fe from diamond wire sawing kerf waste. The initial material contained 5145 ppm Al and 158 ppm Fe. The impact of solid-to-liquid (S:L) ratio, HCl concentration, and the leaching time was investigated. Increasing the acid concentration and leaching time led to greater impurity removal. The optimum S:L ratio for both Al and Fe removal was 4:25. For Al, the highest removal percentage of 83.6% was achieved with 18 wt% HCl and 180 min of leaching. For Fe, the maximum removal of 93.3% was obtained with 14 wt% HCl and 60 min of leaching. Kinetic analysis revealed that Al dissolution followed SCM-chemical reaction control in the first 30 min, transitioning to SCM product layer diffusion control thereafter.

Graphical Abstract