Scholarlink

<p>The advancement of differential imaging and adaptive machine vision demands hardware capable of dynamic signal modulation, yet traditional photodetectors are limited by static doping profiles and fixed junction polarities. To overcome this bottleneck, we present a reconfigurable black phosphorus (BP) p–n homojunction photodetector engineered via in situ ferroelectric domain programming. By leveraging the non-volatile ferroelectric field of a bismuth ferrite substrate, we achieve precise, nondestructive modulation of the BP band structure, allowing for reversible switching between p–n and n–p configurations within a single device channel. This ferroelectric doping strategy effectively eliminates interface damage associated with ion implantation while enabling programmable rectification behaviors. The device demonstrates self-powered operation with a responsivity of 44&#xa0;mA W<sup>−1</sup> at 808&#xa0;nm under zero-bias conditions. Crucially, we demonstrate a single-pixel imaging prototype where the reconfigurable junction polarity enables tunable edge sharpness and high-fidelity image reconstruction. This work establishes a paradigm for ferroelectrically programmable 2D devices, providing a versatile platform for differential imaging and contrast-enhancement optoelectronic applications.</p>

错误：搜索内容不能为空，请输入英文关键词
错误：关键词超出字数限制，请精简
高级检索

High-Performance Differential Imaging via Reconfigurable Black Phosphorus p–n Homojunction Optoelectronics

  • 期刊论文

  • 出版模式：

    开放获取

  • 发表日期：

    2026年2月28日

查看全文
  • Rui Hao,
  • Lili Luo,
  • Lu Yang,
  • Xue Yang,
  • Fengsong Gao,
  • Meijie Zhu,
  • Yingtao Li,
  • Qingliang Feng,
  • Zemin Zhang

摘要

The advancement of differential imaging and adaptive machine vision demands hardware capable of dynamic signal modulation, yet traditional photodetectors are limited by static doping profiles and fixed junction polarities. To overcome this bottleneck, we present a reconfigurable black phosphorus (BP) p–n homojunction photodetector engineered via in situ ferroelectric domain programming. By leveraging the non-volatile ferroelectric field of a bismuth ferrite substrate, we achieve precise, nondestructive modulation of the BP band structure, allowing for reversible switching between p–n and n–p configurations within a single device channel. This ferroelectric doping strategy effectively eliminates interface damage associated with ion implantation while enabling programmable rectification behaviors. The device demonstrates self-powered operation with a responsivity of 44 mA W−1 at 808 nm under zero-bias conditions. Crucially, we demonstrate a single-pixel imaging prototype where the reconfigurable junction polarity enables tunable edge sharpness and high-fidelity image reconstruction. This work establishes a paradigm for ferroelectrically programmable 2D devices, providing a versatile platform for differential imaging and contrast-enhancement optoelectronic applications.