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<p>With high surface-to-volume ratio, the abundant surface states and high carrier concentration are challenging the near-infrared photodetection behaviors of narrow band gap semiconductors nanowires. In this study, the narrow band gap semiconductor of Bi<sub>2</sub>O<sub>2</sub>Se nanosheets (NSs) is adopted to construct mixed-dimensional heterojunctions with GaSb nanowires (NWs) for demonstrating the impressive self-powered NIR photodetection. Benefiting from the built-in electric field of ~ 140&#xa0;meV, the as-constructed NW/NS mixed-dimensional heterojunction self-powered photodetector shows the low dark current of 0.07 pA, high <i>I</i><sub>light</sub>/<i>I</i><sub>dark</sub> ratio of 82 and fast response times of &lt; 2/2&#xa0;ms at room temperature. The self-powered photodetector performance can be further enhanced by fabricating the NW array/NS mixed-dimensional heterojunction by using a contact printing technique. The excellent photodetection performance promises the as-constructed NW/NS mixed-dimensional heterojunction self-powered photodetector in imaging and photocommunication.</p>

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Mixed-Dimensional Nanowires/Nanosheet Heterojunction of GaSb/Bi2O2Se for Self-Powered Near-Infrared Photodetection and Photocommunication

  • 期刊论文

  • 出版模式：

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  • 发表日期：

    2025年6月3日

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  • Guangcan Wang,
  • Zixu Sa,
  • Zeqi Zang,
  • Pengsheng Li,
  • Mingxu Wang,
  • Bowen Yang,
  • Xiaoyue Wang,
  • Yanxue Yin,
  • Zai-xing Yang

摘要

With high surface-to-volume ratio, the abundant surface states and high carrier concentration are challenging the near-infrared photodetection behaviors of narrow band gap semiconductors nanowires. In this study, the narrow band gap semiconductor of Bi2O2Se nanosheets (NSs) is adopted to construct mixed-dimensional heterojunctions with GaSb nanowires (NWs) for demonstrating the impressive self-powered NIR photodetection. Benefiting from the built-in electric field of ~ 140 meV, the as-constructed NW/NS mixed-dimensional heterojunction self-powered photodetector shows the low dark current of 0.07 pA, high Ilight/Idark ratio of 82 and fast response times of < 2/2 ms at room temperature. The self-powered photodetector performance can be further enhanced by fabricating the NW array/NS mixed-dimensional heterojunction by using a contact printing technique. The excellent photodetection performance promises the as-constructed NW/NS mixed-dimensional heterojunction self-powered photodetector in imaging and photocommunication.