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<p>Chemical mechanical polishing (CMP) is a core technology for achieving global planarization of wafers in integrated circuit manufacturing, where the distribution of the slurry flow field plays a crucial role in the polishing efficiency and wafer surface quality. This paper focuses on the CMP process for copper (Cu), conducting an in-depth investigation into the influence mechanism of slurry injection recipes on the flow field distribution and process performance. This study for the first time proposes that using a slurry sweep mode with a 45–210&#xa0;mm sweeping trajectory and a 3:1:1 sweep dwell time ratio can effectively increase the material removal rate. The results show that compared with the fixed slurry injection position mode, the sweep mode could save the slurry consumption by 15% while ensuring a stable material removal rate. Moreover, the wafer surface roughness can still be maintained below 0.2&#xa0;nm, and the within-wafer non-uniformity is less than 1.5%. This study corroborates the feasibility of sweep approach in practical polishing applications, providing theoretical and technical support for the optimization of CMP processes in integrated circuit manufacturing.</p>

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Strategy of Cost Reduction in Copper Chemical Mechanical Polishing: Enhancing Removal Rate and Uniformity Via a Novel Slurry Sweep Mode

  • 期刊论文

  • 发表日期：

    2026年2月2日

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  • Lifei Zhang,
  • Hui Ci,
  • Xinchun Lu

摘要

Chemical mechanical polishing (CMP) is a core technology for achieving global planarization of wafers in integrated circuit manufacturing, where the distribution of the slurry flow field plays a crucial role in the polishing efficiency and wafer surface quality. This paper focuses on the CMP process for copper (Cu), conducting an in-depth investigation into the influence mechanism of slurry injection recipes on the flow field distribution and process performance. This study for the first time proposes that using a slurry sweep mode with a 45–210 mm sweeping trajectory and a 3:1:1 sweep dwell time ratio can effectively increase the material removal rate. The results show that compared with the fixed slurry injection position mode, the sweep mode could save the slurry consumption by 15% while ensuring a stable material removal rate. Moreover, the wafer surface roughness can still be maintained below 0.2 nm, and the within-wafer non-uniformity is less than 1.5%. This study corroborates the feasibility of sweep approach in practical polishing applications, providing theoretical and technical support for the optimization of CMP processes in integrated circuit manufacturing.