Characterization of Melt Formation on the Silicon-Steel Joint, Welded Using 50-ps Laser Pulses
摘要
This paper presents an investigation of interface region weld, formed by picosecond laser irradiation. With ultrashort interaction time, high peak power, and a wide selection of pulse repetition rates this technology enables a precise control over the amount of energy applied to the welded area and achieve strong joint alongside with effective prevention of semiconductor material from thermal destruction. Laser parameters (pulse energy, pulse repetition rate, exposition time) were studied to evaluate its impact on welding process. Well-tunable and precise control over ultrafast laser energy deposition made it possible to achieve surface silicon concentration up to 11% at an average power below 30 W. There are very few reports regarding silicon-metal welding up to date, so the topic is of great interest. Structural features in the welded areas alongside with surface element distribution were studied to reveal the influence of processing parameters on the weld formation process.