Environmental pollution is rapidly increasing due to the growing volume of electronic waste from embedded systems. This paper addresses the challenges associated with the fabrication and modeling of next-generation non-volatile biomemristor. The Ag/Aloe vera/Cu biomemristor was successfully fabricated by utilizing a naturally derived resistive switching layer from Aloe vera fruit. The spin coater technique was used to deposit the active Aloe vera layer at 4000 rpm, yielding an average thickness of \(1.6~\mu m\) measured by alpha-2.0 spectroscopic ellipsometer. The pinched hysteresis loop was observed, confirming the nonvolatile bipolar behavior. The physics-inspired biomemristor model is developed to complement the experimental work by simulating their I–V characteristics and underlying current conduction mechanism. The fabricated device shows a current of \(\pm 4\ \mu \textrm{A}\) , whereas the modeled results indicate \(\pm 4.8\ \mu \textrm{A}\) . The device exhibits stable endurance over 50 switching cycles and reliable retention up to \(10^6\) seconds. The analysis of the I–V of the in-house device and model revealed excellent correspondence in both high-resistance and low-resistance states. Experimental data and simulation data exhibit ohmic behavior with a slope of 1 in the low-resistance state. Additionally, the high-resistance state shows a slope of approximately 2, which supports the space-charge-limited current mechanism. Moreover, the model successfully replicates the setting and resetting voltages observed experimentally. Overall, this study highlights that organic biomaterial is a promising candidate for resistive switching devices. This research paves the path for green electronics for computing applications.
