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<p>This work demonstrates a plasma-free, short-time potassium hydroxide (KOH) wet pretreatment for a hybrid bonding process, targeting high SiO<sub>2</sub>–SiO<sub>2</sub> bonding strength while suppressing Cu surface oxidation. KOH treatment at 50&#xa0;°C for 15&#xa0;s significantly improved SiO<sub>2</sub> wettability, reducing the deionized water contact angle, and enabled a maximum shear strength of 29.6&#xa0;MPa after 300&#xa0;°C annealing. The oxide etching behavior was quantified using a TiO<sub>2</sub> cap structure, confirming time-dependent selective SiO<sub>2</sub> thinning in 5&#xa0;M KOH at 50&#xa0;°C. To evaluate the Cu surface stability, 400&#xa0;nm Cu films were analyzed after exposure to citric acid and subsequent KOH treatment. While atomic force microscope (AFM) roughness showed no pronounced change, the mean conductive AFM current indicated progressively reduced conduction with longer KOH treatment. These results identify short-time KOH as a key process window that balances surface activation and Cu stability for plasma-free hybrid bonding.</p>

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Plasma-free KOH-based surface activation for enhanced hybrid bonding strength

  • 期刊论文

  • 发表日期：

    2026年4月10日

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  • Youngjoon Cha,
  • Gyeongyeol Lee,
  • An Hoang-Thuy Nguyen,
  • Rino Choi

摘要

This work demonstrates a plasma-free, short-time potassium hydroxide (KOH) wet pretreatment for a hybrid bonding process, targeting high SiO2–SiO2 bonding strength while suppressing Cu surface oxidation. KOH treatment at 50 °C for 15 s significantly improved SiO2 wettability, reducing the deionized water contact angle, and enabled a maximum shear strength of 29.6 MPa after 300 °C annealing. The oxide etching behavior was quantified using a TiO2 cap structure, confirming time-dependent selective SiO2 thinning in 5 M KOH at 50 °C. To evaluate the Cu surface stability, 400 nm Cu films were analyzed after exposure to citric acid and subsequent KOH treatment. While atomic force microscope (AFM) roughness showed no pronounced change, the mean conductive AFM current indicated progressively reduced conduction with longer KOH treatment. These results identify short-time KOH as a key process window that balances surface activation and Cu stability for plasma-free hybrid bonding.