A simulation study on resonant tunneling diodes with auxiliary quantum wells based on a self-consistent Wigner–Poisson equation
摘要
We performed a simulation study on resonant tunneling diodes (RTDs) with auxiliary wells (emitter prewell, center subwell, and collector postwell) using self-consistent solutions based on a Wigner–Poisson equation. We previously performed a simulation study on RTDs with auxiliary wells using the Wigner transport equation within the framework of the flat-band model. The flat-band model has a major limitation in that it neglects Coulomb interactions and employs linear potential profiles as input to the Wigner transport equation. The present study reassesses the performance of RTDs with auxiliary wells using the self-consistent solutions instead of the flat-band model. The main findings of this study are summarized as follows. As the prewell width increases, the peak voltage (