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<p>A replacement Insulated Gate Bipolar Transistor (IGBT) for the High Voltage Converter Modulator (HVCM) used in the KAERI 100-MeV proton linear accelerator was evaluated following the discontinuation of the original device. The candidate IGBT was assessed through a structured framework combining off-line switch-plate testing and on-line operation in the HVCM driving three klystrons simultaneously. Off-line measurements clarified differences in switching behavior and characteristics, while on-line measurements confirmed stable pulse generation under nominal operating conditions. Although the candidate device exhibited a modest increase in total loss energy, its lower junction-to-case thermal resistance resulted in a comparable or lower junction temperature rise. Continuous operation since August 2025 without IGBT-related faults further demonstrates the suitability and long-term reliability of the replacement device in an actual accelerator environment.</p>

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Operational validation of a replacement IGBT for the high voltage converter modulator in a proton accelerator at KAERI

  • 期刊论文

  • 发表日期：

    2026年2月26日

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  • Hae-Seong Jeong

摘要

A replacement Insulated Gate Bipolar Transistor (IGBT) for the High Voltage Converter Modulator (HVCM) used in the KAERI 100-MeV proton linear accelerator was evaluated following the discontinuation of the original device. The candidate IGBT was assessed through a structured framework combining off-line switch-plate testing and on-line operation in the HVCM driving three klystrons simultaneously. Off-line measurements clarified differences in switching behavior and characteristics, while on-line measurements confirmed stable pulse generation under nominal operating conditions. Although the candidate device exhibited a modest increase in total loss energy, its lower junction-to-case thermal resistance resulted in a comparable or lower junction temperature rise. Continuous operation since August 2025 without IGBT-related faults further demonstrates the suitability and long-term reliability of the replacement device in an actual accelerator environment.