Scholarlink

<p>This work presents a theoretical study of an optical response of a HEMT based on GaN/AlGaN hetero-junction. The analytical expressions of drain current and threshold voltage of the device have been calculated both for illuminated and dark conditions. The expression of other parameters, such as mutual conductance and drain conductance, has been calculated under an optical exposure. The DC parameters of the device have been studied for different mole fractions of AlGaN and wavelengths of the incident photons. It is observed that the optical response of the device modulates significantly with the selection of mole fraction and wavelength of an incident radiation. This work has also been extended in order to study the wavelength-dependent conductance of this device.</p>

错误：搜索内容不能为空，请输入英文关键词
错误：关键词超出字数限制，请精简
高级检索

DC performance of a GaN HEMT under optical illumination

  • 期刊论文

  • 发表日期：

    2026年1月26日

查看全文
  • Prabir Kumar Shit,
  • Radha Raman Pal,
  • Sutanu Dutta

摘要

This work presents a theoretical study of an optical response of a HEMT based on GaN/AlGaN hetero-junction. The analytical expressions of drain current and threshold voltage of the device have been calculated both for illuminated and dark conditions. The expression of other parameters, such as mutual conductance and drain conductance, has been calculated under an optical exposure. The DC parameters of the device have been studied for different mole fractions of AlGaN and wavelengths of the incident photons. It is observed that the optical response of the device modulates significantly with the selection of mole fraction and wavelength of an incident radiation. This work has also been extended in order to study the wavelength-dependent conductance of this device.