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<p>Flash memory-based synaptic devices are promising components for neuromorphic computing due to their non-volatility and analog programmability. In this study, CdSe/ZnS quantum dots (QDs) were employed as floating gate materials to enhance the performance of conventional flash memory structures. Pt/Cr/Al<sub>2</sub>O<sub>3</sub>/QDs/Al<sub>2</sub>O<sub>3</sub>/SiO<sub>2</sub>/Si stacked capacitors and floating gate transistors (FGTs) were fabricated, and their electrical characteristics were investigated. Capacitance–voltage (<i>C–V</i>) measurements revealed a memory window exceeding 2&#xa0;V, confirming effective charge storage. The fabricated CdSe/ZnS QD-based FGT exhibited threshold voltage shifts in transfer curves, demonstrating analog synaptic weight modulation. The capacitor device showed reliable charge trapping behavior and stable data retention under repeated program/erase (P/E) cycling. P/E characteristics of the FGT were also examined, showing consistent switching suitable for neuromorphic applications. These results confirm the feasibility of CdSe/ZnS QD-based floating gate devices as high-performance non-volatile memory elements and artificial synapses for energy-efficient neuromorphic computing systems.</p>

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Electrical characteristics of CdSe quantum dot floating gate devices for neuromorphic synaptic memory applications

  • 期刊论文

  • 发表日期：

    2026年1月16日

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  • Jaemin Kim,
  • Soyeon Jeong,
  • Taehwan Koo,
  • HyeongJin Chae,
  • Jin-Hyeon Kang,
  • Yongduk Kim,
  • Moongyu Jang

摘要

Flash memory-based synaptic devices are promising components for neuromorphic computing due to their non-volatility and analog programmability. In this study, CdSe/ZnS quantum dots (QDs) were employed as floating gate materials to enhance the performance of conventional flash memory structures. Pt/Cr/Al2O3/QDs/Al2O3/SiO2/Si stacked capacitors and floating gate transistors (FGTs) were fabricated, and their electrical characteristics were investigated. Capacitance–voltage (C–V) measurements revealed a memory window exceeding 2 V, confirming effective charge storage. The fabricated CdSe/ZnS QD-based FGT exhibited threshold voltage shifts in transfer curves, demonstrating analog synaptic weight modulation. The capacitor device showed reliable charge trapping behavior and stable data retention under repeated program/erase (P/E) cycling. P/E characteristics of the FGT were also examined, showing consistent switching suitable for neuromorphic applications. These results confirm the feasibility of CdSe/ZnS QD-based floating gate devices as high-performance non-volatile memory elements and artificial synapses for energy-efficient neuromorphic computing systems.