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<p>Hydrogen exposure plays a critical role in determining the surface chemistry and electrical behavior of amorphous In–Ga–Zn–O (a-IGZO) thin films, which are widely used as transparent channel materials in oxide-based electronics. In this study, we performed an in situ synchrotron-based X-ray photoelectron spectroscopy (XPS) investigation on hydrogen-exposed a-IGZO surfaces to elucidate the competing effects of hydrogen incorporation on oxygen vacancies (V<sub>O</sub>) and metallic states. Clean a-IGZO thin films were sequentially exposed to atomic hydrogen at coverages of 3.6 × 10<sup>4</sup> <i>L</i> and 1.1 × 10<sup>5</sup> <i>L</i>. As the hydrogen exposure increased, the O 1s spectra revealed a systematic reduction of both the oxygen vacancy (O<sub>V</sub>) and metal–oxide (O<sub>M</sub>) components, while the valence band spectra exhibited a simultaneous decrease in deep subgap states (DSS) and an enhancement of metallic features near the Fermi level. The In 3d spectra further confirmed the growth of metallic indium (In<sup>0</sup>) species, indicating that hydrogen not only passivates oxygen vacancies, but also induces reduction of indium ions at the surface. These findings suggest that hydrogen incorporation leads to two competing processes—vacancy filling and metal-ion reduction—that together influence the electronic transport behavior of a-IGZO thin films under hydrogen-rich environments. The results provide new insight into the role of hydrogen in tuning surface electronic structures of oxide semiconductors, which is crucial for reliable device performance and long-term stability.</p>

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Surface chemical state evolution of hydrogen-exposed amorphous IGZO thin films investigated by synchrotron XPS

  • 期刊论文

  • 发表日期：

    2025年12月2日

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  • Se Jun Kang,
  • Jaeyoon Baik,
  • Hyun-Joon Shin

摘要

Hydrogen exposure plays a critical role in determining the surface chemistry and electrical behavior of amorphous In–Ga–Zn–O (a-IGZO) thin films, which are widely used as transparent channel materials in oxide-based electronics. In this study, we performed an in situ synchrotron-based X-ray photoelectron spectroscopy (XPS) investigation on hydrogen-exposed a-IGZO surfaces to elucidate the competing effects of hydrogen incorporation on oxygen vacancies (VO) and metallic states. Clean a-IGZO thin films were sequentially exposed to atomic hydrogen at coverages of 3.6 × 104 L and 1.1 × 105 L. As the hydrogen exposure increased, the O 1s spectra revealed a systematic reduction of both the oxygen vacancy (OV) and metal–oxide (OM) components, while the valence band spectra exhibited a simultaneous decrease in deep subgap states (DSS) and an enhancement of metallic features near the Fermi level. The In 3d spectra further confirmed the growth of metallic indium (In0) species, indicating that hydrogen not only passivates oxygen vacancies, but also induces reduction of indium ions at the surface. These findings suggest that hydrogen incorporation leads to two competing processes—vacancy filling and metal-ion reduction—that together influence the electronic transport behavior of a-IGZO thin films under hydrogen-rich environments. The results provide new insight into the role of hydrogen in tuning surface electronic structures of oxide semiconductors, which is crucial for reliable device performance and long-term stability.