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<p>We report a salt-assisted chemical vapor deposition (CVD) strategy for the scalable synthesis of bilayer WSe<sub>2</sub> on SiO<sub>2</sub>/Si substrates. By employing a precursor mixture of NaCl and tungsten oxide (WO<sub>2.9</sub>), the growth temperature is lowered to 825&#xa0;°C while promoting large-scale bilayer formation. Comprehensive structural and optical characterizations, including Raman spectroscopy, photoluminescence (PL), optical microscopy (OM), and atomic force microscopy (AFM), confirm the high crystallinity and uniformity of the bilayer WSe<sub>2</sub>, which exhibits a high density of 3R (0° twist) stacking order. Field effect transistors based on these bilayer WSe<sub>2</sub> flakes exhibit ohmic contact behavior and significantly higher carrier mobility compared to monolayer devices. These results underscore the potential of salt-assisted CVD as a viable and scalable route for producing high-quality bilayer WSe<sub>2</sub> for next-generation electronic and optoelectronic devices.</p>

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High-yield synthesis of bilayer WSe2 with enhanced carrier mobility via salt-assisted chemical vapor deposition

  • 期刊论文

  • 发表日期：

    2025年11月28日

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  • Kha Minh Nguyen,
  • Duc Chung Nguyen,
  • Yongsun Kim,
  • Ji-Yong Park

摘要

We report a salt-assisted chemical vapor deposition (CVD) strategy for the scalable synthesis of bilayer WSe2 on SiO2/Si substrates. By employing a precursor mixture of NaCl and tungsten oxide (WO2.9), the growth temperature is lowered to 825 °C while promoting large-scale bilayer formation. Comprehensive structural and optical characterizations, including Raman spectroscopy, photoluminescence (PL), optical microscopy (OM), and atomic force microscopy (AFM), confirm the high crystallinity and uniformity of the bilayer WSe2, which exhibits a high density of 3R (0° twist) stacking order. Field effect transistors based on these bilayer WSe2 flakes exhibit ohmic contact behavior and significantly higher carrier mobility compared to monolayer devices. These results underscore the potential of salt-assisted CVD as a viable and scalable route for producing high-quality bilayer WSe2 for next-generation electronic and optoelectronic devices.