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<p>This work proposes an innovative design for GaN-based vertical step-doping superjunction graded barrier (SD-SJ-GB) HEMTs and validates their performance through two-dimensional numerical simulations. This innovative structure incorporates SD n- and p-pillars, leading to a significant increase in the doping concentration and a more uniform electric field compared with conventional GaN-based SD-SJ HEMTs. The SD-SJ-GB vertical HEMTs demonstrated remarkable improvements in the drain current (<i>I</i><sub>ds</sub>), threshold (<i>V</i><sub>T</sub>), cut-off frequency (<i>f</i><sub>T</sub>), OFF-state breakdown voltage (<i>V</i><sub>BR,OFF</sub>), and specific ON-state resistance (<i>R</i><sub>on,A</sub>). The optimized device design with distinct p- and n-pillar doping profiles demonstrated excellent blocking capability, achieving <i>V</i><sub>BR,OFF</sub> values of 2560&#xa0;V and 10,612&#xa0;V with low <i>R</i><sub>ON,A</sub> of 3.30 and 4.25 mΩ·cm<sup>2</sup> for <i>t</i><sub>epi</sub> = 10&#xa0;μm and 120&#xa0;μm at a 2&#xa0;μm half-pillar width, and <i>V</i><sub>BR,OFF</sub> values of 2780&#xa0;V and 12,491&#xa0;V with <i>R</i><sub>ON,A</sub> of 3.38 and 4.28 mΩ·cm<sup>2</sup> for <i>t</i><sub>epi</sub> = 10&#xa0;μm and 120&#xa0;μm at a 3&#xa0;μm half-pillar width. Furthermore, incorporating doping layers with varying concentrations within n- and p-pillars offers the potential for further enhancement. The results demonstrate that the graded barrier and stepped doping layers significantly enhance the performance. The proposed SD-SJ-GB HEMTs are highly promising candidates for high-power applications because they can endure higher voltages while maintaining the switching frequency. Additionally, they contribute to achieving better <i>I</i><sub>ds</sub>, <i>V</i><sub>T</sub>, <i>R</i><sub>ON</sub>, and <i>V</i><sub>BR,OFF</sub> characteristics. Finally, we assessed the advantages of using SD-SJ-GB HEMTs as switching components in a highly efficient boost converter circuit.</p>

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Analysis of step-doped super-junction AlGaN/GaN enhancement-mode HEMTs with graded barrier layers for high-efficiency boost converters

  • 期刊论文

  • 发表日期：

    2025年11月20日

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  • M. Priscilla,
  • A. Mohanbabu

摘要

This work proposes an innovative design for GaN-based vertical step-doping superjunction graded barrier (SD-SJ-GB) HEMTs and validates their performance through two-dimensional numerical simulations. This innovative structure incorporates SD n- and p-pillars, leading to a significant increase in the doping concentration and a more uniform electric field compared with conventional GaN-based SD-SJ HEMTs. The SD-SJ-GB vertical HEMTs demonstrated remarkable improvements in the drain current (Ids), threshold (VT), cut-off frequency (fT), OFF-state breakdown voltage (VBR,OFF), and specific ON-state resistance (Ron,A). The optimized device design with distinct p- and n-pillar doping profiles demonstrated excellent blocking capability, achieving VBR,OFF values of 2560 V and 10,612 V with low RON,A of 3.30 and 4.25 mΩ·cm2 for tepi = 10 μm and 120 μm at a 2 μm half-pillar width, and VBR,OFF values of 2780 V and 12,491 V with RON,A of 3.38 and 4.28 mΩ·cm2 for tepi = 10 μm and 120 μm at a 3 μm half-pillar width. Furthermore, incorporating doping layers with varying concentrations within n- and p-pillars offers the potential for further enhancement. The results demonstrate that the graded barrier and stepped doping layers significantly enhance the performance. The proposed SD-SJ-GB HEMTs are highly promising candidates for high-power applications because they can endure higher voltages while maintaining the switching frequency. Additionally, they contribute to achieving better Ids, VT, RON, and VBR,OFF characteristics. Finally, we assessed the advantages of using SD-SJ-GB HEMTs as switching components in a highly efficient boost converter circuit.