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<p>This work explores the design and analysis of the analog and radio-frequency (RF) performances of the NC-FinFET structure. A comparative study is conducted with the baseline (BL) FinFET. The investigation involves optimizing the device parameters for the ferroelectric negative capacitance metal ferroelectric–metal–insulator–semiconductor (MFMIS) transistor, including varying the thickness of the ferroelectric material region. Sensitivity analysis is performed to evaluate the response of neutral biomolecules by adjusting the dielectric values. Density variation is examined for its impact on electric, analog, and RF parameters. The study includes electric metrics, such as switching ratio, energy band, surface potential, subthreshold swing, and threshold voltage <i>V</i><sub>TH</sub>, as well as sensitivity performances to identify binding sites for biomolecules.</p>

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Designing a proposed negative capacitance (NC)-FinFET with enhanced parameters for versatile application

  • 期刊论文

  • 发表日期：

    2025年9月26日

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  • Asmita Pattnaik,
  • S. K. Mohapatra,
  • Pradipta Dutta,
  • Adham Aleid,
  • Abdullah N. Alodhayb

摘要

This work explores the design and analysis of the analog and radio-frequency (RF) performances of the NC-FinFET structure. A comparative study is conducted with the baseline (BL) FinFET. The investigation involves optimizing the device parameters for the ferroelectric negative capacitance metal ferroelectric–metal–insulator–semiconductor (MFMIS) transistor, including varying the thickness of the ferroelectric material region. Sensitivity analysis is performed to evaluate the response of neutral biomolecules by adjusting the dielectric values. Density variation is examined for its impact on electric, analog, and RF parameters. The study includes electric metrics, such as switching ratio, energy band, surface potential, subthreshold swing, and threshold voltage VTH, as well as sensitivity performances to identify binding sites for biomolecules.