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<p>This study presents the development and evaluation of AlGaN/GaN high-electron-mobility transistors (HEMTs) designed for high-power and high-frequency applications. The devices incorporate micro-gate field plates using a discrete field plate design, effectively reducing the peak electric field between the gate and drain. This results in a notable improvement in breakdown voltage, reaching up to 1330&#xa0;V. The integration of copper interconnects significantly lowers parasitic capacitances, which enhances the cut-off frequency (f<sub>T</sub>) from 45.5&#xa0;GHz to 51.3&#xa0;GHz. These HEMTs demonstrate strong DC performance, with a peak transconductance of 0.275 A/V. Under RF conditions, the devices deliver a high output power density of 6.8&#xa0;W/mm and achieve an impressive power-added efficiency of 73% at 40&#xa0;GHz. Furthermore, the transistors exhibit excellent high-frequency characteristics, achieving a maximum cut-off frequency of 51&#xa0;GHz and a maximum oscillation frequency (f<sub>max</sub>) of 163&#xa0;GHz. These results underscore the effectiveness of copper interconnect technology in enabling high-performance AlGaN/GaN HEMTs for advanced power and microwave applications.</p>

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Micro-gate field plate with Cu-interconnects in AlGaN/GaN HEMT for high power and microwave applications

  • 期刊论文

  • 发表日期：

    2025年7月16日

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  • M. Padmavathi,
  • M. Manikandan

摘要

This study presents the development and evaluation of AlGaN/GaN high-electron-mobility transistors (HEMTs) designed for high-power and high-frequency applications. The devices incorporate micro-gate field plates using a discrete field plate design, effectively reducing the peak electric field between the gate and drain. This results in a notable improvement in breakdown voltage, reaching up to 1330 V. The integration of copper interconnects significantly lowers parasitic capacitances, which enhances the cut-off frequency (fT) from 45.5 GHz to 51.3 GHz. These HEMTs demonstrate strong DC performance, with a peak transconductance of 0.275 A/V. Under RF conditions, the devices deliver a high output power density of 6.8 W/mm and achieve an impressive power-added efficiency of 73% at 40 GHz. Furthermore, the transistors exhibit excellent high-frequency characteristics, achieving a maximum cut-off frequency of 51 GHz and a maximum oscillation frequency (fmax) of 163 GHz. These results underscore the effectiveness of copper interconnect technology in enabling high-performance AlGaN/GaN HEMTs for advanced power and microwave applications.