High-performance AlN/GaN/AlGaN-MOSHEMTs on SiC wafer: scaling and gate material innovations for upcoming radar and communication systems
摘要
The DC/RF performance of a T-gate AlN/GaN heterojunction MOS-HEMT (AGMH) device on SiC substrate with a Hafnium-based high-k gate dielectric material is thoroughly and meticulously investigated in this article. The research investigation looks at how different gate lengths affect important device metrics, such as cut-off frequency (fT), intrinsic capacitances (CGD & CGS), GM (transconductance), and ID (drain current). The proposed AGMH device with LG of 40 nm, tb of 3 nm, tox of 3 nm, LGS of 250 nm, & LGD of 400 nm exhibited ID-max (maximum ID) of 2.221 A/mm, GM-peak (peak transconductance) of 505.5 mS/mm, & fT-max (maximum fT) of 256 GHz. The remarkable DC/RF performance results from strong carrier confinement & minimized leakage current (IDL) enabled by scaling down the device parameters. This makes them a desirable option for RF power electronics and microwave (µw) applications in future generations, with a great deal of room for performance and efficiency gains.