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<p>GaN epilayers grown on c-plane sapphire substrates were irradiated with different doses of <i>γ</i>-rays ranging from 300 to 3000 krad. From the photoluminescence (PL) measurement, the yellow PL (YL) intensity decreased with increasing the <i>γ</i>-ray irradiation dose. From the deep level transient spectroscopy (DLTS), three defect states of E1, E2, and E5 levels with activation energies of 0.17 ± 0.02, 0.52 ± 0.01, and 0.97 ± 0.02&#xa0;eV below the conduction band edge were found in the samples. The E1, E2, and E5 levels originated from the defects of nitrogen vacancy (<i>V</i><sub>N</sub>), nitrogen antisite (<i>N</i><sub>Ga</sub>), and interstitial nitrogen (<i>N</i><sub>i</sub>), respectively. With increasing <i>γ</i>-ray doses, the <i>N</i><sub>t</sub> value of <i>N</i><sub>Ga</sub> was increased, while the <i>N</i><sub>t</sub> values of <i>V</i><sub>N</sub>, <i>N</i><sub>i</sub>, <i>V</i><sub>Ga</sub>–<i>N</i><sub>i</sub> complex decreased. Therefore, it was suggested that the yellow PL band originated from the <i>V</i><sub>Ga</sub>–<i>N</i><sub>i</sub> complex.</p>

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A relation between yellow band and defect states of GaN epilayers during gamma-ray irradiation with different doses

  • 期刊论文

  • 发表日期：

    2025年5月20日

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  • Kyoung Su Lee,
  • Dong-Seok Kim,
  • Eun Kyu Kim

摘要

GaN epilayers grown on c-plane sapphire substrates were irradiated with different doses of γ-rays ranging from 300 to 3000 krad. From the photoluminescence (PL) measurement, the yellow PL (YL) intensity decreased with increasing the γ-ray irradiation dose. From the deep level transient spectroscopy (DLTS), three defect states of E1, E2, and E5 levels with activation energies of 0.17 ± 0.02, 0.52 ± 0.01, and 0.97 ± 0.02 eV below the conduction band edge were found in the samples. The E1, E2, and E5 levels originated from the defects of nitrogen vacancy (VN), nitrogen antisite (NGa), and interstitial nitrogen (Ni), respectively. With increasing γ-ray doses, the Nt value of NGa was increased, while the Nt values of VN, Ni, VGa–Ni complex decreased. Therefore, it was suggested that the yellow PL band originated from the VGa–Ni complex.