Development of magnetic filter-based plasma source for low electron temperature below 1 eV

Advancements in semiconductor processing and material manufacturing demand innovative plasma sources capable of preventing plasma-induced damage. These industrial applications necessitate the independent generation of plasma in process regions that maintain low electron temperature and consequent low plasma potential. This study presents a plasma source that employs a magnetic filter with permanent magnets to produce a plasma with low electron temperature below 1 eV in the diffusion region under a magnetic field-free environment. Experimental results confirmed that the system maintains the electron temperature consistently below 1 eV and the plasma potential below 3 V in the diffusion region across a range of operating pressure and RF power levels, ensuring minimal sheath voltage and compatibility with sensitive processes. The plasma density demonstrated a scalable linear relationship, achieving a 40-fold increase with a 6-fold increase in RF power, while consistently maintaining low electron temperature condition. This work provides a scalable and adaptable foundation for advanced material processing techniques requiring minimal plasma-induced damage, paving the way for next-generation semiconductor fabrication and precision applications.