Exploring the effect of Ba²⁺ ions doping on the dielectric properties of SrSnO₃ ceramics

This study investigates the structural and dielectric properties of Ba_xSr_1-xSnO₃ (BSSO, x = 0, 0.2, 0.4, 0.6, 0.8) ceramics prepared by the solid-state reaction method. X-ray diffraction and X-ray photoelectron spectroscopy were used to characterize the phase purity and chemical state of the component elements, respectively. Frequency and temperature dependence of the dielectric properties suggest that the dielectric constant and loss are influenced by Ba²⁺ ions doping concentration, reaching an optimal dielectric performance at x = 0.4. The observed dielectric behavior can be explained by the interfacial polarization and dielectric relaxation processes, originated from the existing oxygen vacancies and Sn⁴⁺–Sn²⁺ pairs. These findings provide valuable insights into the potential applications of Ba_xSr_1-xSnO₃ ceramics in electronic devices.