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Strip-line injection kicker for PAL-EUV booster synchrotron

  • Jun Ho Ko,
  • Min Woo Kim,
  • Sojeong Lee,
  • Jang-Hui Han,
  • Juho Hong

摘要

There has been a demand for compact-size extreme ultraviolet (EUV) storage ring synchrotron facilities with sizes within tens of meters for use in the semiconductor industry. To meet this demand, Pohang Accelerator Laboratory developed the PAL-EUV facility in an area of 15 m × 15 m or less. From the constraint, PAL-EUV has a photocathode RF gun, a 3 m S-band linear accelerator, a 22.2 m circumference booster synchrotron, and a 36 m circumference storage ring synchrotron. We use the strip-line injection kicker for the booster synchrotron injection. The booster synchrotron strip-line injection kicker has a 0.24 m effective length, 7.3 kV strip-line kick voltage, and about 10 ns pulse duration. In this paper, we introduce the overall parameters of the strip-line injection kicker, the signal simulation and wake-field simulation, the result of the high voltage conditioning test under vacuum, and the operation result after the installation in the PAL-EUV tunnel.