Analysis of electrical performance of MgZnO/ZnO high electron mobility transistor

The electrical performance of MgZnO/ZnO high electron mobility transistor (HEMT) is analyzed in this work. A physics-based analysis is performed to compute the two-dimensional electron gas (2-DEG density: n_s) for different gate-voltage (V_g), difference in the Fermi potential (E_F) and position of first sub-band (E₀), linearity range measurement parameter: d(E_F − E₀)/dV_g, gate-source capacitance (C_gs) for different thickness of barrier layer (d = 30, 35, and 40 nm); Mg composition (x = 0.37, 0.47, and 0.57); and temperature (T = 300, 400, and 500 K). It is noticed that in the weak-inversion region: − 4 V < V_g < 0.1 V; the magnitude of n_s is highest for highest value of d (= 40 nm). The results show that n_s is enhanced with increase in mole fraction of Mg and its magnitude is computed highest for x = 0.57 due to increased polarization charges at the hetero-interface generated due to strain. It is noticed that in the weak-inversion region, n_s is increased significantly with respect to temperature as compared to the other region i.e., 0.1 V < V_g < 6 V.