Analysis of Spin Transfer Torque Magneto Resistive Random Access Memory Based on Their Materials, Structures, and Applications

Spintronics is a new field of science that controls electron spins using spin-dependent currents. Spintronics combines spin degree with charge to create ultra-low power devices like magnetic tunnel junctions (MTJs). Hence, MTJ-based spintronics are important because of their enormous scalability, high read speed, and relative magnetoresistance. The demand for MTJ materials is high, especially in mobile platforms, mass data storage, and other industrial/automotive applications. Two-dimensional (2D) materials bring opportunities for MTJs since they have a lot of interesting characteristics. MTJs based on 2D ferromagnetic (FM) materials with superior spin polarization look promising for next-generation nanoscale devices. This review discusses various 2D materials for double barrier layer MTJ, such as La₂O₃, Mg (OH)_2, Ca(OH)₂, TiO_2, \({\text{Ta}}_{2}{\text{O}}_{5}\) ${\text{Ta}}_2{\text{O}}_5$ , Al₂O_3, and some other recently developed 2D materials. The different parameters of the double barrier layer MTJ are discussed and compared in this paper. The All-Optical Switching (AOS), and helicity-dependent switching of magnetization are discussed in this paper. MTJ based on AOS improves the speed and efficiency of the spintronics circuit. The present study involves a comparative investigation of different strategies aimed at enhancing the speed and minimizing the noise associated with spintronics memory.