Optimizing CIGS Solar Cell Performance Through Numerical Optimization Using TCAD Tools

This paper presents an investigation of CIGS solar cell using 2D modelling using SILVACO Atlas TCAD tools under drift–diffusion and with Boltzmann distribution across the Cds/CIGS layer interface. The impact of SRV (surface recombination velocity) over the heterojunction interface on nature of optical and electrical properties of Cds/CIGS junction is investigated. Investigation of different back mirror contact silver, copper gold, palladium and titanium by replacing molybdenum back mirror contact to improve photo absorption in the layer. In this work, there is calibration of CIGS and ZnO doping was investigated under illumination of AM1.5G. In addition, we investigated impact of Cds + CIGS thickness and cathode work function at different values. Under AM1.5 illumination at 300 K, the best power conversion efficiency (PCE) of 22.59% is achieved with a thinner absorber of around 0.5 μm thick.