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<p>Class F Power Amplifiers are used in 5G wireless applications owing to its high efficiency and gain. These amplifiers achieve reduction in power consumption and heat generation and make wireless communication systems more energy-efficient and reliable. The objective of the research focuses on the design and fabrication of Class F power amplifiers with CGH40010F GaN HEMT transistor to ensure that there is a significant improvement in power gain. The performance of the amplifier is measured using Rollet’s stability factor and Power Added Efficiency using ADS simulation tool. The DC characteristics of the GaN HEMT transistor are experimented to determine the bias conditions under which the Class F power amplifier will operate. Load pull analysis and impedance matching techniques are used to maximize output power of the amplifier. Through the ADS simulation results, proposed Class F PA yields the maximum PAE of 63.41%, gain of 12.589&#xa0;dB and power delivery of 39.8 dBm for a power input of 29 dBm. Additionally, the stability factor of the Class F PA amplifier is observed as 1.74 which ensures the stability of the system. The amplifier is implemented on an FR4 substrate, and its PCB is designed using PCB designing techniques. Finally, the amplifier is fabricated by exporting the Gerber file obtained from the PCB design in ADS.</p>

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Design and Fabrication of sub-6 GHz Linear Power Amplifier for 5G Networks

  • 期刊论文

  • 发表日期：

    2026年7月27日

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  • I. S. Akila

摘要

Class F Power Amplifiers are used in 5G wireless applications owing to its high efficiency and gain. These amplifiers achieve reduction in power consumption and heat generation and make wireless communication systems more energy-efficient and reliable. The objective of the research focuses on the design and fabrication of Class F power amplifiers with CGH40010F GaN HEMT transistor to ensure that there is a significant improvement in power gain. The performance of the amplifier is measured using Rollet’s stability factor and Power Added Efficiency using ADS simulation tool. The DC characteristics of the GaN HEMT transistor are experimented to determine the bias conditions under which the Class F power amplifier will operate. Load pull analysis and impedance matching techniques are used to maximize output power of the amplifier. Through the ADS simulation results, proposed Class F PA yields the maximum PAE of 63.41%, gain of 12.589 dB and power delivery of 39.8 dBm for a power input of 29 dBm. Additionally, the stability factor of the Class F PA amplifier is observed as 1.74 which ensures the stability of the system. The amplifier is implemented on an FR4 substrate, and its PCB is designed using PCB designing techniques. Finally, the amplifier is fabricated by exporting the Gerber file obtained from the PCB design in ADS.