Ultra Low Power and High Speed Electronic Circuits Using Double Gate Tunnel Field Effect Transistor

In the context of the modern electronic landscape, Tunnel Field-Effect Transistors (TFETs) have emerged as promising alternatives to traditional MOSFETs for digital circuit design, despite their lower ON current and slower performance. This study investigates the simulation of various digital logic gates and circuits, including inverters, AND, OR, NAND, NOR, XOR, and XNOR gates, as well as Half Adders, Full Adders, and Ring Oscillators, using the software Cadence Virtuoso in 20 nm technology. Both homogeneous and heterogeneous TFETs are considered. The evaluation focuses primarily on two crucial parameters: power consumption and delay. Additionally, the performance of the Ring Oscillator is assessed in terms of its oscillation frequency. Comparative analysis with existing circuitry demonstrates significant enhancements in both power efficiency and speed, making these suitable in developing ultra-low-power & high-speed applications which operate on battery.