Survey On the Sensing Techniques Used for Spin Transfer Torque MRAM

This article provides a high-level, circuit-level summary of advancements in spin-transfer-torque (STT) magnetically random-access memory (MRAM) sensing. The sensing margin, read energy reduction, and compact cell size of various sensing approaches are discussed. Perpendicular-STT MRAM based on non-volatile store memory can effectively minimize processor power consumption without execution distortion. The P-MOS-assisted voltage sense amplifier enhances MRAM read reliability at restricted tunnel magnetic resistance and low voltage. The dynamic dual reference sense (DDRS) technique increases the sensing margin. The magnetic tunnel junction’s resistance variation from bit to bit can be overcome by using non-destructive DDRS techniques. When compared to the voltage sensing approach, the time-based sensing technique increases read yield. The cycle sense margin enhancement method is employed to reduce performance fluctuations brought on by a faulty process. The self-matching complementary-reference technique contributes to the development of other emerging computing ideas and offers a promising detection approach for superior presentation memories. This work is anticipated to support the advancement of sensing in STT MRAM in cutting-edge innovation nodes, thereby aligning with the universal memory capabilities of STT MRAM.