Enhancing GaN LED Efficiency with Advanced Quantum Well Structure

This short communication presents a novel GaN LED design featuring multiple quantum wells (MQW). The MQW is designed using a specific arrangement of GaN/AlGaN layers in a 5-period superlattice (SL) configuration, positioned both above and below a 3-period stack of AlGaN/InGaN active layers (SAL). The incorporation of SL layers effectively curbs electron and hole leakage from the SAL towards the anode and cathode. This proposed structure optimizes radiative recombination within the quantum wells, resulting in remarkable LED performance: an impressive output power of 9.77 W/cm and internal quantum efficiency of 89%. Notably, efficiency droop is reduced to merely 3.33% at maximum current, rendering it highly promising for low-power lighting applications.