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<p>Nitrogen-doped ZnO (ZnO:N) is a semiconductor with enhanced photocatalytic properties, which makes it a promising material for antimicrobial applications. In this study, the photoelectrocatalytic inactivation of <i>Staphylococcus aureus</i>, <i>Escherichia coli</i> and <i>Candida albican</i> on ZnO:N films was investigated. The films were prepared by electrochemical deposition with different doping concentrations (20, 40, 60 cm<sup>3</sup>&#xa0;min<sup>−1</sup>). X-ray diffraction patterns showed that pure ZnO and ZnO:N films displayed a crystalline wurtzite structure. Scanning electron micrograph revealed a hexagonal nanorod morphology for samples. The substitutional doping that occurred in ZnO favored the formation of oxygen vacancies, as shown by X-ray photoelectron spectroscopy measurements. The nitrogen doping caused a decrease in the values of the band gap energy (E<sub>bg</sub>) from 3.17 to 3.12&#xa0;eV. Photoelectrochemical studies showed higher photocurrent density for ZnO:N compared to ZnO films, reaching 60&#xa0;µA&#xa0;cm<sup>−2</sup> at 0.70&#xa0;V (vs. Ag/AgCl). The chronopotentiometry curves showed that all films present n-type semiconductor behavior and flat band potentials suitable for generating reactive oxygen species capable of inactivating microorganisms. Under irradiation, all ZnO:N films inhibited <i>S. aureus</i>. Also, ZnO:N-40 film showed complete inhibitory effects on <i>E. coli</i> and <i>C. albicans.</i> These results highlight the potential of nitrogen-doped ZnO films for antimicrobial applications.</p>

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Electrochemical deposition of N-doped ZnO film and its superior potential to inactivate microorganisms

  • 期刊论文

  • 发表日期：

    2025年5月20日

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  • M. K. Silva,
  • C. M. V. P. Ramos,
  • A. E. B. Lima,
  • R. M. P. Silva,
  • G. S. de Figueiredo,
  • R. A. Antunes,
  • W. Alves,
  • G. E. Luz. Jr,
  • R. S. Santos

摘要

Nitrogen-doped ZnO (ZnO:N) is a semiconductor with enhanced photocatalytic properties, which makes it a promising material for antimicrobial applications. In this study, the photoelectrocatalytic inactivation of Staphylococcus aureus, Escherichia coli and Candida albican on ZnO:N films was investigated. The films were prepared by electrochemical deposition with different doping concentrations (20, 40, 60 cm3 min−1). X-ray diffraction patterns showed that pure ZnO and ZnO:N films displayed a crystalline wurtzite structure. Scanning electron micrograph revealed a hexagonal nanorod morphology for samples. The substitutional doping that occurred in ZnO favored the formation of oxygen vacancies, as shown by X-ray photoelectron spectroscopy measurements. The nitrogen doping caused a decrease in the values of the band gap energy (Ebg) from 3.17 to 3.12 eV. Photoelectrochemical studies showed higher photocurrent density for ZnO:N compared to ZnO films, reaching 60 µA cm−2 at 0.70 V (vs. Ag/AgCl). The chronopotentiometry curves showed that all films present n-type semiconductor behavior and flat band potentials suitable for generating reactive oxygen species capable of inactivating microorganisms. Under irradiation, all ZnO:N films inhibited S. aureus. Also, ZnO:N-40 film showed complete inhibitory effects on E. coli and C. albicans. These results highlight the potential of nitrogen-doped ZnO films for antimicrobial applications.