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<p><i>CdSe</i><sub><i>1 − x</i></sub><i>Te</i><sub><i>x</i></sub> (<i>x</i> = 0.0, 0.3, 0.6, and 1.0) thin films were grown on glass substrates by spray pyrolysis method. Numerous characterization techniques such as X-ray diffraction (XRD), Scanning electron microscopy (SEM), Energy dispersive X-ray (EDX), and UV-Vis spectrophotometer were employed to study the structural, morphological, compositional and optical analysis of the deposited <i>CdSe</i><sub><i>1 − x</i></sub><i>Te</i><sub><i>x</i></sub> thin films. XRD data revealed that as the Te composition increases, there could be a phase transition from a <i>CdSe</i>-rich phase to a <i>CdTe</i>-rich phase or the formation of an alloy. The average crystallite size of the films was calculated using the Scherrer’s formula and varies from 16&#xa0;nm to 24&#xa0;nm. Scanning electron micrographs of <i>CdSe</i><sub><i>1 − x</i></sub><i>Te</i><sub><i>x</i></sub> films demonstrated the uniform deposition of spherical-shaped grains. EDX analysis confirms the formation of CdSeTe thin films. The optical band gap values of deposited films were found to be decreased from 1.79&#xa0;eV to 1.51&#xa0;eV illustrating the potential viability for photovoltaic and optoelectronic devices.</p>

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Spray Pyrolysis Synthesis of CdSe1 − xTex Alloy Thin Films for Efficient Photovoltaic Devices

  • 期刊论文

  • 发表日期：

    2025年12月4日

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  • A. D. Kanwate,
  • L. H. Kathwate,
  • V. R. Panse,
  • S. V. Dewalkar,
  • Antomi Saregar,
  • Rofiqul Umam

摘要

CdSe1 − xTex (x = 0.0, 0.3, 0.6, and 1.0) thin films were grown on glass substrates by spray pyrolysis method. Numerous characterization techniques such as X-ray diffraction (XRD), Scanning electron microscopy (SEM), Energy dispersive X-ray (EDX), and UV-Vis spectrophotometer were employed to study the structural, morphological, compositional and optical analysis of the deposited CdSe1 − xTex thin films. XRD data revealed that as the Te composition increases, there could be a phase transition from a CdSe-rich phase to a CdTe-rich phase or the formation of an alloy. The average crystallite size of the films was calculated using the Scherrer’s formula and varies from 16 nm to 24 nm. Scanning electron micrographs of CdSe1 − xTex films demonstrated the uniform deposition of spherical-shaped grains. EDX analysis confirms the formation of CdSeTe thin films. The optical band gap values of deposited films were found to be decreased from 1.79 eV to 1.51 eV illustrating the potential viability for photovoltaic and optoelectronic devices.