<p>Sb₂O₃ and Sb₂O₅ are semiconducting metal oxides which have been used for gas sensing purposes in pristine, decorated, and composite forms. Furthermore, Sb as dopant can be used as substitution element in various metal oxides, where creation of oxygen vacancies and lattice distortion, along with limitation of particle growth causes enhanced gas response. Herein, we have described the various aspects of sensing behavior of resistive sensors based on these materials in detail. Sb₂O₃ with more stability has been more studied for gas sensing application relative to Sb₂O₅. Gas sensing temperature can be decreased to room-temperature using UV illumination or composite making with appropriate semiconducting materials such as conducting polymers. Sb as dopant can increased the conductivity and create oxygen vacancies inside of sensing material, hence increasing sensing performance. Details of sensing mechanism of Sb₂O₃, Sb₂O₅, and Sb-doped sensor are described and mainly related to the formation of Schottky barriers, heterojunctions, oxygen vacancies and increase of surface area.</p>