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<p>The transition metal arsenides TMAs<sub>2</sub> are one of the most inorganic materials, which have been explored intensively in recent decades due to their amazing properties and potential applicatioSns in semiconductor technology. For this motive, we are interested in investigating the structural, electronic, and optical properties of the 3d, 4d, and 5d based arsenides TMAs<sub>2</sub> (TM = Fe, Ru, Os) using the FP-APLW method. The equilibrium parameters reveal that TMAs<sub>2</sub> crystallize in an orthorhombic structure (Pnnm). The thermodynamic stability of TMAs<sub>2</sub> has been confirmed by their formation energy (<InlineEquation ID="IEq1"> <InlineMediaObject> <ImageObject Color="BlackWhite" FileRef="13538_2025_1782_Article_IEq1.gif" Format="GIF" Height="19" Rendition="HTML" Resolution="72" Type="Linedraw" Width="22" /> </InlineMediaObject> <EquationSource Format="TEX">\({E}_{f}\)</EquationSource> <EquationSource Format="MATHML"><math> <msub> <mi>E</mi> <mi>f</mi> </msub> </math></EquationSource> </InlineEquation>) and cohesive energy (<InlineEquation ID="IEq2"> <InlineMediaObject> <ImageObject Color="BlackWhite" FileRef="13538_2025_1782_Article_IEq2.gif" Format="GIF" Height="16" Rendition="HTML" Resolution="72" Type="Linedraw" Width="21" /> </InlineMediaObject> <EquationSource Format="TEX">\({E}_{c}\)</EquationSource> <EquationSource Format="MATHML"><math> <msub> <mi>E</mi> <mi>c</mi> </msub> </math></EquationSource> </InlineEquation>). Band structures depicted that TMAs<sub>2</sub> have semiconductor nature with a narrow bandgap of 0.263 eV (FeAs<sub>2</sub>), 0.481 eV (RuAs<sub>2</sub>), and 0.606 eV (OsAs<sub>2</sub>). The calculated DOSs reveal that the Fe-3d, Ru-4d and Os-5d orbitals have the most dominant contribution at the top of valence bands close to E<sub>F</sub>. In addition, TMAs<sub>2</sub> show amazing optical responses like high absorption, conductivity, and refractivity in the visible light range. Importantly, the present results underscore the potential and suitability of semiconductors TMAs<sub>2</sub> for optoelectronics and spintronics applications.</p>

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A Systematic Study of the Structural, Electronic and Optical Properties of 3d, 4d and 5d Binary Transition Metal Arsenides TMAs2 (TM = Fe, Ru, Os)

  • 期刊论文

  • 发表日期：

    2025年5月5日

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  • M. Musa Saad H.-E.,
  • B. O. Alsobhi,
  • A. Almeshal

摘要

The transition metal arsenides TMAs2 are one of the most inorganic materials, which have been explored intensively in recent decades due to their amazing properties and potential applicatioSns in semiconductor technology. For this motive, we are interested in investigating the structural, electronic, and optical properties of the 3d, 4d, and 5d based arsenides TMAs2 (TM = Fe, Ru, Os) using the FP-APLW method. The equilibrium parameters reveal that TMAs2 crystallize in an orthorhombic structure (Pnnm). The thermodynamic stability of TMAs2 has been confirmed by their formation energy ( \({E}_{f}\) E f ) and cohesive energy ( \({E}_{c}\) E c ). Band structures depicted that TMAs2 have semiconductor nature with a narrow bandgap of 0.263 eV (FeAs2), 0.481 eV (RuAs2), and 0.606 eV (OsAs2). The calculated DOSs reveal that the Fe-3d, Ru-4d and Os-5d orbitals have the most dominant contribution at the top of valence bands close to EF. In addition, TMAs2 show amazing optical responses like high absorption, conductivity, and refractivity in the visible light range. Importantly, the present results underscore the potential and suitability of semiconductors TMAs2 for optoelectronics and spintronics applications.