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<p>Integrating epitaxial Pb(Zr, Ti)O<sub>3</sub> (PZT) thin films on Si requires solving two critical challenges: crystallographic orientation control of the bottom electrode and thermal stress mismatch. This study establishes a “Ti(002)→TiO₂(004)→Pt(111)” texture inheritance pathway, combined with thermal stress modulation, to achieve high-quality epitaxial Pt(111) electrodes. The crystallographic information transfer across layers and its impact on PZT properties are systematically investigated. The texture quality of the Ti layer is amplified through the TiO<sub>2</sub> intermediate layer: any degradation in Ti(002) orientation is magnified, leading to increased dispersion in Pt(111) orientation, which is quantitatively inherited by the PZT layer, following <InlineEquation ID="IEq1"> <EquationSource Format="TEX">\(\:{FWHM}_{PZT}\approx\:1.2\times\:{FWHM}_{Pt}+0.5^\circ\:\)</EquationSource> </InlineEquation>. By optimizing Ti sputtering and rapid thermal oxidation, a highly oriented rutile TiO<sub>2</sub>(004) buffer layer is obtained, inducing a Pt(111) electrode with FWHM as low as 1.5°. The resulting PZT films exhibit high (001) orientation, dense morphology, and excellent properties (<i>P</i><sub>r</sub> ≈ 15µC/cm²; <i>e</i>₃₁,f = -15.5&#xa0;C/m<sup>2</sup>). Notably, Pt(111) texture critically governs PZT switching symmetry: when Pt FWHM ≤ 2°, the piezoelectric/ferroelectric curves are perfectly symmetric; for FWHM &gt; 2°, asymmetry increases progressively. Integrating such PZT films into a C-beam piezoelectric MEMS scanning mirror achieves an optical scan angle of ± 40° at 25 V<sub>pp</sub>, demonstrating both large deflection and symmetric scanning. This work provides a reliable fabrication route for high-performance piezoelectric MEMS and elucidates the texture and stress transfer mechanism in heteroepitaxy, offering a universal strategy for integrating complex oxide films on Si.</p> Graphical Abstract <p></p>

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Constructing a Ti(002)→TiO2(004)→Pt(111) Texture Inheritance Chain for High-Performance Epitaxial PZT Thin Films

  • 期刊论文

  • 发表日期：

    2026年5月13日

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  • Chenxi Gao,
  • Jing Xie,
  • Xiaolong Ma,
  • Hongyan Song,
  • Yuanjie Wang,
  • Jianpeng Xing,
  • Chaobo Li

摘要

Integrating epitaxial Pb(Zr, Ti)O3 (PZT) thin films on Si requires solving two critical challenges: crystallographic orientation control of the bottom electrode and thermal stress mismatch. This study establishes a “Ti(002)→TiO₂(004)→Pt(111)” texture inheritance pathway, combined with thermal stress modulation, to achieve high-quality epitaxial Pt(111) electrodes. The crystallographic information transfer across layers and its impact on PZT properties are systematically investigated. The texture quality of the Ti layer is amplified through the TiO2 intermediate layer: any degradation in Ti(002) orientation is magnified, leading to increased dispersion in Pt(111) orientation, which is quantitatively inherited by the PZT layer, following \(\:{FWHM}_{PZT}\approx\:1.2\times\:{FWHM}_{Pt}+0.5^\circ\:\) . By optimizing Ti sputtering and rapid thermal oxidation, a highly oriented rutile TiO2(004) buffer layer is obtained, inducing a Pt(111) electrode with FWHM as low as 1.5°. The resulting PZT films exhibit high (001) orientation, dense morphology, and excellent properties (Pr ≈ 15µC/cm²; e₃₁,f = -15.5 C/m2). Notably, Pt(111) texture critically governs PZT switching symmetry: when Pt FWHM ≤ 2°, the piezoelectric/ferroelectric curves are perfectly symmetric; for FWHM > 2°, asymmetry increases progressively. Integrating such PZT films into a C-beam piezoelectric MEMS scanning mirror achieves an optical scan angle of ± 40° at 25 Vpp, demonstrating both large deflection and symmetric scanning. This work provides a reliable fabrication route for high-performance piezoelectric MEMS and elucidates the texture and stress transfer mechanism in heteroepitaxy, offering a universal strategy for integrating complex oxide films on Si.

Graphical Abstract