<p>The industrial standard copper (Cu) interconnects face a substantial resistivity increase at thinner linewidths, posing a well-known challenge to limit overall device performance. To address this issue, we have evaluated the potential properties of cobalt (Co) based binary compounds as replacements for Cu. Co is considered as a promising alternative due to its potential for enhanced reliability and low resistivity at sub-nanoscale dimensions. Furthermore, the combination of elements provides a possibility to engineer novel properties, transcending the limitations of elemental metals and expanding the search space for next-generation interconnects. In this study, a high-throughput screening method was used to identify several Co-based binary compounds with superior electronic transport and reliability at reduced thickness. The findings demonstrate that specific Co-based binary compounds hold significant potential to overcome the performance limitations of scaled interconnects.</p> Graphical Abstract <p></p>