Scholarlink

<p>We report the molecular beam epitaxial growth and device applications of α-In<sub>2</sub>Se<sub>3</sub> thin films on hexagonal boron nitride (<i>h</i>-BN). We employed a two-step growth approach to grow thin films. Electron microscopy reveals uniform surfaces and a heteroepitaxial relationship between α-In<sub>2</sub>Se<sub>3</sub> and <i>h</i>-BN, even though the α-In<sub>2</sub>Se<sub>3</sub>/<i>h</i>-BN is highly lattice-mismatched. Furthermore, the electrical and optoelectrical characteristics of the α-In<sub>2</sub>Se<sub>3</sub> layers were examined by fabricating corresponding field-effect transistors and photodetectors.</p> Graphical Abstract <p></p>

错误：搜索内容不能为空，请输入英文关键词
错误：关键词超出字数限制，请精简
高级检索

Molecular Beam Epitaxial Growth of α-In2Se3 Thin Films on Hexagonal Boron Nitride and Device Applications

  • 期刊论文

  • 出版模式：

    开放获取

  • 发表日期：

    2026年1月17日

查看全文
  • Imhwan Kim,
  • Wonwoo Suh,
  • Jonghwa Kim,
  • Myungjun Cha,
  • Eunsu Lee,
  • Seongbeom Kim,
  • Hyunyong Choi,
  • Celesta S. Chang,
  • Gyu-Chul Yi

摘要

We report the molecular beam epitaxial growth and device applications of α-In2Se3 thin films on hexagonal boron nitride (h-BN). We employed a two-step growth approach to grow thin films. Electron microscopy reveals uniform surfaces and a heteroepitaxial relationship between α-In2Se3 and h-BN, even though the α-In2Se3/h-BN is highly lattice-mismatched. Furthermore, the electrical and optoelectrical characteristics of the α-In2Se3 layers were examined by fabricating corresponding field-effect transistors and photodetectors.

Graphical Abstract