Scholarlink

<p>Cesium lead halide perovskites (CsPbX<sub>3</sub>, X = Cl, Br, I) nanocrystals (NCs) with high absorption coefficient are recognized as advantageous active materials for photodetectors. Here, a solution-based phototransistor using CsPbBr<sub>3</sub> NCs-graphene heterostructure as channel materials was fabricated and investigated. The CsPbBr<sub>3</sub> NCs-graphene hybrid phototransistor exhibited outstanding optoelectrical properties with high responsivity, external quantum efficiency and detectivity of 48&#xa0;A/W, 36% and 1.5 × 10<sup>7</sup> Jones under power density of 56 mW/cm<sup>2</sup> of 405&#xa0;nm light. Moreover, the device showed an excellent photo-switching stability and reproducibility as well as fast response with rise/fall times of 7.4/26.8 ms, respectively. The high sensitivity of the phototransistor results from the large absorption of incoming photons in CsPbBr<sub>3</sub> NCs, the high carrier mobility of graphene, and the gate-modulated contact barrier height at CsPbBr<sub>3</sub> NCs-graphene interface. This generic strategy by combining photosensitive materials and 2D materials into heterostructures to fabricate phototransistor paves a route to the application of inexpensive, highly sensitive, and integrable devices.</p> Graphical Abstract <p></p>

错误：搜索内容不能为空，请输入英文关键词
错误：关键词超出字数限制，请精简
高级检索

Highly Photosensitive Phototransistor Based on CsPbBr3 NCs-Graphene Mixed Channel

  • 期刊论文

  • 发表日期：

    2025年12月2日

查看全文
  • Yongli Che,
  • Xiaolong Cao,
  • Jianquan Yao

摘要

Cesium lead halide perovskites (CsPbX3, X = Cl, Br, I) nanocrystals (NCs) with high absorption coefficient are recognized as advantageous active materials for photodetectors. Here, a solution-based phototransistor using CsPbBr3 NCs-graphene heterostructure as channel materials was fabricated and investigated. The CsPbBr3 NCs-graphene hybrid phototransistor exhibited outstanding optoelectrical properties with high responsivity, external quantum efficiency and detectivity of 48 A/W, 36% and 1.5 × 107 Jones under power density of 56 mW/cm2 of 405 nm light. Moreover, the device showed an excellent photo-switching stability and reproducibility as well as fast response with rise/fall times of 7.4/26.8 ms, respectively. The high sensitivity of the phototransistor results from the large absorption of incoming photons in CsPbBr3 NCs, the high carrier mobility of graphene, and the gate-modulated contact barrier height at CsPbBr3 NCs-graphene interface. This generic strategy by combining photosensitive materials and 2D materials into heterostructures to fabricate phototransistor paves a route to the application of inexpensive, highly sensitive, and integrable devices.

Graphical Abstract