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<p>Achieving thermally stable ohmic contact with low specific contact resistivity (<i>ρ</i><sub>c</sub>) is essential for high-performance photovoltaic and opto-electronic devices. In this study, we systematically investigate the effects of Pt seed-layer thickness and rapid thermal annealing temperature on the interfacial reaction between Pt/Ti/Pt/Au contacts and <i>p</i>⁺-In<sub>0.53</sub>Ga<sub>0.47</sub>As. Transmission line method measurements reveal a strong dependence of <i>ρ</i><sub>c</sub> on both Pt thickness and annealing temperature, exhibiting a non-monotonic trend with an optimum at a 9&#xa0;nm Pt seed layer and 380 ℃ anneal. A minimal <i>ρ</i><sub>c</sub> (~ 3 × 10<sup>–6</sup> Ω·cm<sup>2</sup>) indicate the formation of a continuous but non-overgrown interfacial reaction layer that enables uniform tunneling transport. In contrast, thinner or thicker Pt layers yield increased <i>ρ</i><sub>c</sub> due to discontinuous coverage or over-reaction, respectively. The optimized ohmic contacts maintain low resistivity even after 450&#xa0;°C annealing, confirming their superior thermal robustness. These findings present a clear process window for reproducible, low-resistance, and thermally stable ohmic contacts to <i>p</i>⁺-In<sub>0.53</sub>Ga<sub>0.47</sub>As, offering practical guidance for advanced device fabrication such as photovoltaics and photodetector applications.</p> Graphic Abstract <p></p>

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Effect of Pt Seed-Layer Thickness and Annealing on the Interfacial Reaction and Contact Resistivity of p⁺-In0.53Ga0.47As

  • 期刊论文

  • 发表日期：

    2025年11月28日

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  • Jongchan Ryu,
  • Hongju Kim,
  • Young Ho Chu,
  • Seongheon Kim,
  • Yongmin Baek,
  • Taehoon Kim,
  • Yun Seog Lee

摘要

Achieving thermally stable ohmic contact with low specific contact resistivity (ρc) is essential for high-performance photovoltaic and opto-electronic devices. In this study, we systematically investigate the effects of Pt seed-layer thickness and rapid thermal annealing temperature on the interfacial reaction between Pt/Ti/Pt/Au contacts and p⁺-In0.53Ga0.47As. Transmission line method measurements reveal a strong dependence of ρc on both Pt thickness and annealing temperature, exhibiting a non-monotonic trend with an optimum at a 9 nm Pt seed layer and 380 ℃ anneal. A minimal ρc (~ 3 × 10–6 Ω·cm2) indicate the formation of a continuous but non-overgrown interfacial reaction layer that enables uniform tunneling transport. In contrast, thinner or thicker Pt layers yield increased ρc due to discontinuous coverage or over-reaction, respectively. The optimized ohmic contacts maintain low resistivity even after 450 °C annealing, confirming their superior thermal robustness. These findings present a clear process window for reproducible, low-resistance, and thermally stable ohmic contacts to p⁺-In0.53Ga0.47As, offering practical guidance for advanced device fabrication such as photovoltaics and photodetector applications.

Graphic Abstract