Scholarlink

<p>This study demonstrates the use of 2,2′,2′′-(1,3,5-benzenetriyl)-tris(1-phenyl-1&#xa0;H-benzimidazole) (TPBi) as a stabilizing interlayer beneath the Ag top electrode in top-emitting quantum dot light-emitting diodes (QLEDs). The TPBi layer effectively suppresses Ag agglomeration during thermal evaporation, thereby improving film uniformity and optical transmittance from 41.9 to 44.4%. This morphological enhancement yields superior device performance, with the resulting QLEDs based on CdZnSeS/ZnS QDs achieving a peak luminance of 118,110&#xa0;cd/m² and a current efficiency of 39.3&#xa0;cd/A. The highest efficiency is obtained at the current density corresponding to peak luminance, which is highly advantageous for practical displays. This work highlights a new functional role of TPBi beyond charge transport and presents an effective strategy to enhance the device performance and fabrication reliability of top-emitting QLEDs for advanced display technologies.</p> Graphical Abstract <p></p>

错误：搜索内容不能为空，请输入英文关键词
错误：关键词超出字数限制，请精简
高级检索

Top-Emitting QLEDs with Thin Stabilizing Layer for Uniform Silver Electrodes

  • 期刊论文

  • 发表日期：

    2025年11月7日

查看全文
  • Jaehyung Park,
  • Jiwan Kim

摘要

This study demonstrates the use of 2,2′,2′′-(1,3,5-benzenetriyl)-tris(1-phenyl-1 H-benzimidazole) (TPBi) as a stabilizing interlayer beneath the Ag top electrode in top-emitting quantum dot light-emitting diodes (QLEDs). The TPBi layer effectively suppresses Ag agglomeration during thermal evaporation, thereby improving film uniformity and optical transmittance from 41.9 to 44.4%. This morphological enhancement yields superior device performance, with the resulting QLEDs based on CdZnSeS/ZnS QDs achieving a peak luminance of 118,110 cd/m² and a current efficiency of 39.3 cd/A. The highest efficiency is obtained at the current density corresponding to peak luminance, which is highly advantageous for practical displays. This work highlights a new functional role of TPBi beyond charge transport and presents an effective strategy to enhance the device performance and fabrication reliability of top-emitting QLEDs for advanced display technologies.

Graphical Abstract