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<p>Ultrathin ReS<sub>2</sub>-based field-effect transistors (FETs) are promising candidates for use in extreme radiation environments, such as nuclear facilities and space missions, due to their layered structure and unique electrical properties. In this study, we investigate the degradation in electrical performance of ReS<sub>2</sub> FETs subjected to 2.2&#xa0;MeV neutron irradiation. As neutron fluence increases, the on-current and field-effect mobility decrease significantly, from 84% to 31% and from 88% to 37% of their initial values, respectively, while both subthreshold swing (SS) and hysteresis exhibit notable increases. These degradations are attributed to the formation of oxides and the generation of interface traps induced by irradiation. Additionally, threshold voltage shifts are observed, which are attributed to the varying dominance of oxide-trap- and interface-trap-related mechanisms. These findings enhance the understanding of fast neutron irradiation effects on ReS<sub>2</sub>-based nanoelectronic devices and support their reliable operation in radiation-rich environments.</p> Graphical abstract <p></p>

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Neutron Irradiation-Induced Trap States and Electrical Performance Degradation in ReS2 Field-Effect Transistors

  • 期刊论文

  • 发表日期：

    2025年10月21日

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  • Seung Yong Back,
  • Gyeong Deok Seo,
  • Ji Won Heo,
  • Hagyoul Bae,
  • Bong-ki Jung,
  • TaeWan Kim

摘要

Ultrathin ReS2-based field-effect transistors (FETs) are promising candidates for use in extreme radiation environments, such as nuclear facilities and space missions, due to their layered structure and unique electrical properties. In this study, we investigate the degradation in electrical performance of ReS2 FETs subjected to 2.2 MeV neutron irradiation. As neutron fluence increases, the on-current and field-effect mobility decrease significantly, from 84% to 31% and from 88% to 37% of their initial values, respectively, while both subthreshold swing (SS) and hysteresis exhibit notable increases. These degradations are attributed to the formation of oxides and the generation of interface traps induced by irradiation. Additionally, threshold voltage shifts are observed, which are attributed to the varying dominance of oxide-trap- and interface-trap-related mechanisms. These findings enhance the understanding of fast neutron irradiation effects on ReS2-based nanoelectronic devices and support their reliable operation in radiation-rich environments.

Graphical abstract