Parallel-Conduction-Based Thermoelectric Responses in Chemical Vapor Deposition Grown Twisted Bilayer Graphene
摘要
Abstract
We report parallel-conduction-based thermoelectric responses in chemical vapor deposition grown hexagonal twisted bilayer graphene. We observe that two independent graphene layers form various transfer characteristics in terms of layer-asymmetric charge distribution, which can be understood by a two parallel conductor model. The thermoelectric responses exhibit distinct behavior from single systems of graphene layers, which can be explained by a two band model due to the parallel conduction. Based on the charge transport mechanism, specific transfer characteristic is demonstrated by asymmetrically tuning charge-carrier distribution between graphene layers by polymer-based dual-gate configuration.
Graphical Abstract