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<p>The increasing demand for miniaturized and high-performance integrated circuits requires efficient interposer technologies for advanced semiconductor packaging. In this study, anodic aluminum oxide (AAO) was investigated as a potential interposer substrate owing to its excellent electrical insulation and low dielectric constant. A Pd-TiO<sub>2</sub> ink catalyst was applied to enhance the dielectric performance while suppressing copper ion penetration during the electroless Cu deposition. Compared to conventional Sn-Pd catalysts, the application of Pd-TiO<sub>2</sub> improved the dielectric stability and interfacial reliability. Subsequent Cu electroplating using nitrotetrazolium blue chloride (NTBC) as a leveling additive enabled uniform, void-free through-hole filling while minimizing surface overplating, and demonstrated improved void suppression compared to conventional multi-additive systems. Morphological and electrical characterizations confirmed the effectiveness of this single-additive method. This integrated approach combining Pd-TiO<sub>2</sub> catalysis and NTBC-assisted plating demonstrates a viable route toward AAO-based interposers with enhanced dielectric and metallization properties. These findings support the feasibility of using AAO substrates for next-generation semiconductor packages that require high signal integrity and thermal reliability.</p> Graphical Abstract <p></p>

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Fabrication of Anodic Aluminum Oxide and Cu Electrode and Improvement of Its Mechanical and Electrical Properties

  • 期刊论文

  • 发表日期：

    2025年7月24日

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  • Chae Yoon Kim,
  • Min-Jeong Lee,
  • Eun Soo Shim,
  • Se Rin Park,
  • Jae-Hong Lim

摘要

The increasing demand for miniaturized and high-performance integrated circuits requires efficient interposer technologies for advanced semiconductor packaging. In this study, anodic aluminum oxide (AAO) was investigated as a potential interposer substrate owing to its excellent electrical insulation and low dielectric constant. A Pd-TiO2 ink catalyst was applied to enhance the dielectric performance while suppressing copper ion penetration during the electroless Cu deposition. Compared to conventional Sn-Pd catalysts, the application of Pd-TiO2 improved the dielectric stability and interfacial reliability. Subsequent Cu electroplating using nitrotetrazolium blue chloride (NTBC) as a leveling additive enabled uniform, void-free through-hole filling while minimizing surface overplating, and demonstrated improved void suppression compared to conventional multi-additive systems. Morphological and electrical characterizations confirmed the effectiveness of this single-additive method. This integrated approach combining Pd-TiO2 catalysis and NTBC-assisted plating demonstrates a viable route toward AAO-based interposers with enhanced dielectric and metallization properties. These findings support the feasibility of using AAO substrates for next-generation semiconductor packages that require high signal integrity and thermal reliability.

Graphical Abstract